Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switch.
q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
s Applications
q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
Allowable power dissipation
TC= 25˚C Ta= 25˚C
Channel temperature
Storage temperature
* L= 5mH, IL= 4A, 1 pulse
Symbol VDSS VGSS ID IDP EAS
*
PD
Tch Tstg
Rating 750 ±30 ±4 ±8 40 50 2 150
–55 to +150
Unit V V A A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET |
|
| 2 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 3 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2215-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 8 | 2SK2218 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 9 | 2SK2219 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 10 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 11 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 12 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|