Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 45˚ 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0+0.2.
0.4 max. 1 2SK2211 ID VDS 3.0 Ta = 25°C 2.5 2.5 3.0 Silicon MOS FETs (Small Signal) ID VDS 1.6 RDS VDS Drain to source ON-resistance RDS(ON) (Ω) VDS =10 V Ta = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID = 0.5 A Ta = 25°C Drain current ID (A) 2.0 Drain current ID (A) VGS = 3.5 V 2.0 1.5 3.0 V 1.0 2.5 V 0.5 2.0 V 0 0 2 4 6 8 10 12 1.5 1.0 0.5 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) RDS ID 1.4 1.6 Ta = 25°C Yfs ID Input capacitance (Common source), Output capacitance (Common sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS | |
2 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
3 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK2215-01S |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
8 | 2SK2218 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
9 | 2SK2219 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
10 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
11 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
12 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |