Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SK2213-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,76Ω 10A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics .
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,76Ω 10A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS |
|
| 3 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET |
|
| 4 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 5 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2215-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 8 | 2SK2218 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 9 | 2SK2219 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 10 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 11 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 12 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|