2SK2201 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) 2SK2201 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.28 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V).
/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
2 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
3 | 2SK2203 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
4 | 2SK2207 |
Sanken electric |
MOSFET | |
5 | 2SK2208 |
Sanken electric |
MOSFET | |
6 | 2SK2209-01R |
Fuji Electric |
Power MOSFET | |
7 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS | |
8 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET | |
9 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
10 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET |