2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolut.
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• Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK2202
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 120 ±20 7 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
2 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
3 | 2SK2203 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
4 | 2SK2207 |
Sanken electric |
MOSFET | |
5 | 2SK2208 |
Sanken electric |
MOSFET | |
6 | 2SK2209-01R |
Fuji Electric |
Power MOSFET | |
7 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS | |
8 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET | |
9 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
10 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET |