Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features · Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim. · Especially suited for use in audio, telephone capacitor microphones. · Excellent voltage characteristic. · Excellent transient characteristic. · Adoption of FBET pro.
· Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.
· Especially suited for use in audio, telephone capacitor microphones.
· Excellent voltage characteristic.
· Excellent transient characteristic.
· Adoption of FBET process.
Package Dimensions
unit:mm 2058A
[2SK2219]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VGDO IG ID PD Tj
Tstg
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS |
|
| 2 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET |
|
| 3 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 4 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2215-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 8 | 2SK2216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2218 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 10 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 11 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 12 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|