2SK2218 - Sanyo Semicon Device

2SK2218 N-Channel Junction Silicon FET

Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |. · Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.

Features

· Adoption of FBET process.
· Amateur radio equipment.
· UHF amplifiers, MIX, OSC, analog switches.
· Large | yfs |.
· Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) Rati.