2SK208 - Toshiba Semiconductor

2SK208 Silicon N Channel Junction Type Field Effect Transistor

2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package. Unit: mm Absolute Maximum Ra.

Features

tor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure Symbol Test Condition IGSS VGS = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 μA IDSS (Note) VDS = 10 V, V.