Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics -.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2004-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 3 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2007 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 8 | 2SK2008 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2009 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 11 | 2SK2010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET |
|