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2SK208 |
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| Part Number | 2SK208 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • H... |
| Features |
tor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
Symbol
Test Condition
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS (Note)
VDS = 10 V, V... |
| Document |
 2SK208 Data Sheet
PDF 287.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 2 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|