2SK2008 - Hitachi Semiconductor

2SK2008 Silicon N-Channel MOS FET

2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain.

Features

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• Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 60 150.