2SK2003-01M - Inchange Semiconductor

2SK2003-01M N-Channel MOSFET Transistor

·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VG.

Features

(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2A 2.0 2.4 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 500 µA Ciss Input capacitance 1000 1500 Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 20 30 pF Coss Output capacitance 85 130 tr Rise time td(on) Turn-on delay time tf Fall time VGS=10V;ID=4A; VDD=300V; RL=10Ω 15 25 20 30 ns 15 25 td(off) Turn-off delay.