2SK2009 - Toshiba Semiconductor

2SK2009 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.06 μs (typ.) toff = 0.12 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) • Small package • Enhancemen.

Features

f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1992-04 1 2014-03-01 2SK2009 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage curre.