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Ordering number:ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2010] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Abso.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SK2010]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-S.
2SK2010 - Inchange Semiconductor
·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2011 |
Sanyo Semicon Device |
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| 2 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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| 3 | 2SK2013 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
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| 4 | 2SK2015 |
Panasonic |
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| 5 | 2SK2016 |
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| 6 | 2SK2018-01L |
Fuji Electric |
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| 7 | 2SK2018-01S |
Fuji Electric |
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| 8 | 2SK2019-01 |
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| 9 | 2SK2019-01 |
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| 10 | 2SK2000-R |
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| 11 | 2SK2002-01M |
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| 12 | 2SK2002-01MR |
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|