Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SK1937-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,48Ω 15A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - .
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,48Ω 15A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls).
2SK1937-01 - INCHANGE
·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot varia.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK1937 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK193 |
NEC |
N-Channel FET |
|
| 3 | 2SK1930 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1931 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET |
|
| 5 | 2SK1933 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | 2SK1933 |
Renesas |
Silicon N Channel MOS FET |
|
| 7 | 2SK1933 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK1934 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1936 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK1936-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 11 | 2SK1938 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK1938-01 |
INCHANGE |
N-Channel MOSFET |
|