·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID IDM Drain-Source Voltage (VG.
METER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9A IGSS Gate-Body Leakage Current VGS=±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Forward On-Voltage IS=36A; VGS=0 Gfs Forward Transconductance VDS= 25V;ID=9A tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=18A; VDD=300V; RL=10Ω toff Turn-off time 2SK1938-01 MIN TYPE MAX UNIT 500 V 2.5 3.5 V 0.25 0.35 Ω ±100 nA 500 µA 1.5 V 9.0 S 80 120 35 55 ns 120.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1938-01R |
Fuji Electric |
Power MOSFET | |
2 | 2SK1938 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK193 |
NEC |
N-Channel FET | |
4 | 2SK1930 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1931 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET | |
6 | 2SK1933 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK1933 |
Renesas |
Silicon N Channel MOS FET | |
8 | 2SK1933 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1934 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK1936 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1936-01 |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK1937 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |