2SK1937 - Inchange Semiconductor

2SK1937 N-Channel MOSFET Transistor

·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V .

Features

GS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 7.5A 0.48 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 500 µA Ciss Input capacitance 2500 3800 Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 60 90 pF Coss Output capacitance 260 390 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A; VDD=300V; RL=10Ω 105 45 ns 90 toff Turn-off time 210 NOTICE： ISC reserves the rights to make changes of the con.