2SK1934 - Hitachi Semiconductor

2SK1934 Silicon N-Channel MOSFET

2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain cur.

Features

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• Low on
  –resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 1000 ±30 8 24 8 150 150
  –55 to +150 Unit V V A A A W °C °C 2 2SK1934 El.