2SK1937-01 |
Part Number | 2SK1937-01 |
Manufacturer | INCHANGE |
Description | ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch... |
Features |
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 7.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Forward On-Voltage
IS=30A; VGS=0
Gfs
Forward Transconductance
VDS= 25V;ID=7.5A
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=15A; VDD=300V; RL=10Ω
toff
Turn-off time
2SK1937-01
MIN TYPE MAX UNIT
500
V
2.5
3.5
V
0.48 Ω
±100 nA
500
µA
1.5
V
7.0
S
105
45 ns
135... |
Document |
2SK1937-01 Data Sheet
PDF 232.33KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1937-01 |
Fuji Electric |
N-channel MOS-FET | |
2 | 2SK1937 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK193 |
NEC |
N-Channel FET | |
4 | 2SK1930 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1931 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET |