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SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1931 ( F5E20 ) 200V 5A FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is small. •œ Built-in ZD for Gate Protection. APPLICATION •œ DC/DC converters •œ Power supplies of DC 12-24V input •œ Product related to Integrated Service Digital Network OUTLINE DIMENSIONS Case : E-pack (Unit : .
•œ Applicable to 4V drive.
•œ The static Rds(on) is small.
•œ Built-in ZD for Gate Protection. APPLICATION
•œ DC/DC converters
•œ Power supplies of DC 12-24V input
•œ Product related to Integrated Service Digital Network
OUTLINE DIMENSIONS
Case : E-pack (Unit : mm)
RATINGS
•œAbsolute Maximum Ratings
• Tc i = 25
•Ž
•j Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current
• DC
•j i ID Continuous Drain Current
• Peak) i IDP Continuous Source Current
• DC
•j i IS Total Power Dissipation PT Conditions Ratings -55
•`150 150.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK193 |
NEC |
N-Channel FET |
|
| 2 | 2SK1930 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | 2SK1933 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1933 |
Renesas |
Silicon N Channel MOS FET |
|
| 5 | 2SK1933 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1934 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK1936 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK1936-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 9 | 2SK1937 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK1937-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 11 | 2SK1937-01 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | 2SK1938 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|