·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS.
Drain-Source Breakdown Voltage VGS= 0; ID=1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9A 0.25 0.35 Ω IGSS Gate-Body Leakage Current VGS=±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 500 µA Ciss Input capacitance 3300 4950 Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 80 120 pF Coss Output capacitance 340 510 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=18A; VDD=300V; RL=10Ω 80 120 35 55 ns 120 180 toff Turn-off time 190 285 NOT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK193 |
NEC |
N-Channel FET | |
2 | 2SK1930 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1931 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET | |
4 | 2SK1933 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1933 |
Renesas |
Silicon N Channel MOS FET | |
6 | 2SK1933 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1934 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK1936 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1936-01 |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK1937 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1937-01 |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK1937-01 |
INCHANGE |
N-Channel MOSFET |