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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle.
tor-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 200 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 30 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 5 15 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage tf Fall Time IF= 6A IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 50Ω;VCC= 200V 2.0 V 0.4 us NOTICE： ISC reserves the rights to make changes of the content herein .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD570 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD5703 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD571 |
NEC |
NPN Silicon Transistor |
|
| 4 | 2SD575 |
ETC |
Triple Diffused Mesa Type Silicon Transistor |
|
| 5 | 2SD577 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD5011 |
Inchange Semiconductor |
Power Transistor |
|
| 7 | 2SD504 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD5041 |
USHA |
Transistors |
|
| 9 | 2SD506 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD5070 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors |
|
| 12 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|