2SD5702 Inchange Silicon NPN Power Transistors Datasheet, en stock, prix

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2SD5702

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2SD5702
2SD5702 2SD5702
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Part Number 2SD5702
Manufacturer Inchange
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA...
Features tor-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 200 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 30 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 5 15 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage tf Fall Time IF= 6A IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 50Ω;VCC= 200V 2.0 V 0.4 us NOTICE: ISC reserves the rights to make changes of the content herein ...

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