2SD570 - INCHANGE

2SD570 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas.

Features

A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IE= 0.1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz MIN TYP. MAX UNIT 70 V 0.6 V 1.0 V 100 μA 100 μA 100 10 MHz 60 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contai.