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·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT 1500 V 800 V 6 .
age IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A; VCE= 5V VECF C-E Diode Forward Voltage fT Current-Gain—Bandwidth Product tf Fall Time w ww s c s .i IF= 2.5A IC= 0.5A; VCE= 10V IC= 2A, IB1= 0.6A; IB2= -1.2A RL= 100Ω; VCC= 200V n c . i m e 8 2.0 V 3 MHz 0.4 μs isc Website：www.iscsemi.cn 2 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors |
|
| 2 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 3 | 2SD5072 |
Fairchild |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
|
| 4 | 2SD5072 |
Savantic |
Silicon NPN Power Transistors |
|
| 5 | 2SD5072 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 2SD5074 |
Inchange Semiconductor |
Power Transistor |
|
| 7 | 2SD5075 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD5075 |
Savantic |
Silicon NPN Power Transistors |
|
| 9 | 2SD5075T |
Savantic |
Silicon NPN Power Transistors |
|
| 10 | 2SD5075T |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 11 | 2SD5076 |
Savantic |
Silicon NPN Power Transistors |
|
| 12 | 2SD5076 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|