2SD1638 - INCHANGE

2SD1638 NPN Transistor

·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RAT.

Features

cified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA, IE= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA ICBO Collector Cutoff Current VCB= 100V, IE= 0 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 1A ; VCE= 2V 1000 10000 COB Output Capacitance IE= 0 ; VCB= 10V,f= 1MHz 25 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifi.