2SD1601 - Inchange Semiconductor

2SD1601 Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.

Features

RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 4mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 40mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 50V; RBE= ∞ hFE DC Current Gain IC= 2A; VCE= 3V VECF C-E Diode Forward Voltage IF= 4A Switching times ton Turn-on Time tstg Storage Time IC= 2A, IB1= IB2= 4mA tf Fall Time 2SD1601 .