Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD1638 |
Click to view a larger image
| Part Number | 2SD1638 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0
100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA, IE= 0
100
V
VCE(sat)
Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
1.5
V
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3
mA
hFE
DC Current Gain
IC= 1A ; VCE= 2V
1000
10000
COB
Output Capacitance
IE= 0 ; VCB= 10V,f= 1MHz
25
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifi... |
| Document |
 2SD1638 Data Sheet
PDF 204.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1630 |
NEC |
NPN SILICON DARLINGTON POWER TRANSISTOR |
|
| 2 | 2SD1631 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SD1632 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1632 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1633 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|