·With TO-3PFa package ·High voltage ,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Co.
C=3A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=1A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=3A ; VCE=10V 5 15 VF Diode forward voltage IC=-4A 2.2 V Switching times tstg Storage time IC=3A IBend=1A;LLeak=5µH 4 9 µs tf Fall time 0.8 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1632 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 .
·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1630 |
NEC |
NPN SILICON DARLINGTON POWER TRANSISTOR | |
2 | 2SD1631 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SD1633 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SD1633 |
INCHANGE |
NPN Transistor | |
5 | 2SD1633 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SD1634 |
INCHANGE |
NPN Transistor | |
7 | 2SD1634 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SD1638 |
INCHANGE |
NPN Transistor | |
9 | 2SD1638 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD1600 |
INCHANGE |
NPN Transistor | |
11 | 2SD1601 |
Inchange Semiconductor |
Power Transistor | |
12 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |