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·With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Coll.
er cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=5A; IB=5mA IC=5A ;IB=5mA VCB=100V;IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V 1500 MIN 100 www.datasheet4u.com 2SD1634 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE TYP. MAX UNIT V 1.5 2.0 100 100 5 10000 V V µA µA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A ;IB1=8mA IB2=-8mA; VCC=50V 3.0 5.0 3.0 µs µs µs hFE Classifications Q 1500-6000 P 5000-10000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1634 Fig.2 Outline.
2SD1634 - INCHANGE
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·High Speed.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1630 |
NEC |
NPN SILICON DARLINGTON POWER TRANSISTOR |
|
| 2 | 2SD1631 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SD1632 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1632 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1633 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1633 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1633 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1638 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1638 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|