2SD1631 - Toshiba Semiconductor

2SD1631 Silicon NPN Epitaxial Type Transistor

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximu.

Features

ector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 µA ― ― 10 µA 30 ― ― V 4000 ― ― ― ― 1.5 V ― ― 2.2 V Turn-on time Switching time Storage time ton 20 µs Input IB1 Output ― 0.20 ― IB1 IB2 15 Ω IB2 tstg ― 0.6 ― µs VCC = 15 V Fall time tf IB1 = −IB2 = 1 mA IC = 1 A, duty cycle ≤ 1% ― 0.3 ― Marking D1631 Product No. Lot No. Explanation of Lot No. .