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·With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector curre.
t Emitter cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=3A; IB=3mA IC=3A; IB=3mA VCB=100V;IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=3A ; VCE=3V 1500 MIN 100 www.datasheet4u.com 2SD1633 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE TYP. MAX UNIT V 1.5 2.0 100 100 5 10000 V V µA µA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC=50V 3.0 5.0 3.0 µs µs µs hFE Classifications Q 1500-6000 P 5000-10000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1633 Fig.2 .
2SD1633 - INCHANGE
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·High Speed.
2SD1633 - Panasonic Semiconductor
Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 0.7±0.1 For voltage switching ■.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1630 |
NEC |
NPN SILICON DARLINGTON POWER TRANSISTOR |
|
| 2 | 2SD1631 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SD1632 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1632 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1634 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1634 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1638 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1638 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|