2SD1631 Toshiba Semiconductor Silicon NPN Epitaxial Type Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SD1631

Toshiba Semiconductor
2SD1631
2SD1631 2SD1631
zoom Click to view a larger image
Part Number 2SD1631
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applicati...
Features ector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 µA ― ― 10 µA 30 ― ― V 4000 ― ― ― ― 1.5 V ― ― 2.2 V Turn-on time Switching time Storage time ton 20 µs Input IB1 Output ― 0.20 ― IB1 IB2 15 Ω IB2 tstg ― 0.6 ― µs VCC = 15 V Fall time tf IB1 = −IB2 = 1 mA IC = 1 A, duty cycle ≤ 1% ― 0.3 ― Marking D1631 Product No. Lot No. Explanation of Lot No. ...

Document Datasheet 2SD1631 Data Sheet
PDF 116.58KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 2SD1630
NEC
NPN SILICON DARLINGTON POWER TRANSISTOR Datasheet
2 2SD1632
INCHANGE
NPN Transistor Datasheet
3 2SD1632
SavantIC
SILICON POWER TRANSISTOR Datasheet
4 2SD1633
Panasonic Semiconductor
Silicon NPN Transistor Datasheet
5 2SD1633
INCHANGE
NPN Transistor Datasheet
More datasheet from Toshiba Semiconductor



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact