2SD1606 - Inchange Semiconductor

2SD1606 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .

Features

-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 6A; IB= 60mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE DC Current Gain IC= 3A; VCE= 3V VECF C-E Diode Forward Voltage IF= 6A Switching times ton Turn-on Time tstg Storage Time IC= 3A, IB1= IB2= 6mA tf Fall Time 2SD1606 MIN TYP. MAX UNIT 12.