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2SD1606 |
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| Part Number | 2SD1606 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute ... |
| Features |
I C = 6 A, IB = 60 mA*1 I D = 6 A*1 I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf 2 2SD1606 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 10 iC (peak) Collector current IC (A) IC (max) 3 PW Area of Safe Operat... |
| Document |
 2SD1606 Data Sheet
PDF 35.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1603 |
Hitachi Semiconductor |
NPN Transistor |
|