2SD1608 - Inchange Semiconductor

2SD1608 Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co.

Features

Emitter Sustaining Voltage IC= 50mA; L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; IB= 0 hFE DC Current Gain IC= 4A; VCE= 3V Switching times ton Turn-on Time tstg Storage Time IC= 4A, IB1= IB2= 8mA tf Fall Time 2SD1608 MIN TYP. MAX UNIT 120 V 1.5 V 3.0 V 2.0 V 3.5 V .