2SD1605 - Inchange Semiconductor

2SD1605 Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

Features

5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A; IB= 3mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A; IB= 30mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE DC Current Gain IC= 1.5A; VCE= 3V VECF C-E Diode Forward Voltage IF= 3A Switching times ton Turn-on Time tstg Storage Time IC= 1.5A, IB1= IB2= 3mA tf Fall.