Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD1606 |
Click to view a larger image
| Part Number | 2SD1606 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB= 60mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
hFE
DC Current Gain
IC= 3A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 6A
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 3A, IB1= IB2= 6mA
tf
Fall Time
2SD1606
MIN TYP. MAX UNIT
12... |
| Document |
 2SD1606 Data Sheet
PDF 210.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1603 |
Hitachi Semiconductor |
NPN Transistor |
|