2SD1607 - INCHANGE

2SD1607 NPN Transistor

·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications .

Features

sistor 2SD1607 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V ICBO Collector Cutoff current VCB= 120V, IE= 0 ICEO IEBO hFE-1 hFE-2 Collector Cutoff current Emitter Cutoff Current DC Current Gain DC Current Gain VCE= 120V, IB= 0 VEB= 6V; .