2SD1517 - Inchange Semiconductor

2SD1517 Power Transistor

·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

IONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain IC= 0.5A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 10MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 0.5A; IB1= -IB2= 50mA; VCC= 50V MIN TYP. MAX UNIT 80 V 0.5 V 1.5 V 10 μA 50 .