2SD1514 - INCHANGE

2SD1514 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.

Features

TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A , IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A , IB= 20mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A , IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A , IB= 20mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 3V hFE-2 DC .