·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.
TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A , IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A , IB= 20mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A , IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A , IB= 20mA ICBO Collector Cutoff current VCB= 200V, IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 3V hFE-2 DC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1510 |
INCHANGE |
NPN Transistor | |
2 | 2SD1511 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1513 |
NEC |
NPN Silicon Transistor | |
4 | 2SD1513 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SD1513 |
JCET |
NPN Transistor | |
6 | 2SD1514 |
INCHANGE |
NPN Transistor | |
7 | 2SD1516 |
Inchange Semiconductor |
Silicon NPN Transistor | |
8 | 2SD1517 |
Inchange Semiconductor |
Power Transistor | |
9 | 2SD1518 |
Inchange Semiconductor |
Power Transistor | |
10 | 2SD1500 |
Inchange Semiconductor |
Power Transistor | |
11 | 2SD1503 |
INCHANGE |
NPN Transistor | |
12 | 2SD1504 |
Hitachi Semiconductor |
Silicon NPN Transistor |