2SD1516 - Inchange Semiconductor

2SD1516 Silicon NPN Transistor

·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Colle.

Features

turation Voltage IC= 2A ;IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 2V hFE-2 DC Current Gain IC= 0.5A ; VCE= 2V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V Switching Times ton Turn-on Time tstg Storage Time IC= 0.5A ,IB1= IB2= 50mA tf Fall Time 2SD1516 MIN TYP. MAX UNIT 80 V 0.5 V 1.5 V 10 μA 50 μA 45 60 260 2.5 MHz 0.1 μs 2.5 μs 0.3 μs NOTICE： ISC reserves the rights to make changes of .