2SD1518 - Inchange Semiconductor

2SD1518 Power Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Co.

Features

itter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 900V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.6A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz tf Fall Time IC= 2.5A; IB1= 0.5A; IB2= 1A 2SD1518 MIN TYP. MAX UNIT 5.0 V 1.5 V 1.0 mA 1.0 mA 8 10 40 5 MHz 75 pF 0.5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T.