2SD1510 - INCHANGE

2SD1510 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage.

Features

)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA 4.0 V VBE(on) Base -Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 2.0 mA hFE -1 DC Current Gain IC= 0.5A ; VCE= 3V 1000 hFE -2 DC Current Gain IC= 3A ; VCE= 3V 1000 10000 fT Current-Gain—Bandwidth Product hFE-2Classifications R Q P IC= 0.5A ; VCE= 10V 20 MHz 1000-2500 .