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2SD1517 |
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| Part Number | 2SD1517 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching ·Minimum Lot-to-Lot variations ... |
| Features |
IONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V; f= 10MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A; IB1= -IB2= 50mA; VCC= 50V
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
10 μA
50 ... |
| Document |
 2SD1517 Data Sheet
PDF 216.18KB |
| Distributor | Stock | Price | Buy |
|---|
