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2SC5994 - ON Semiconductor

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2SC5994 NPN Single Bipolar Transistor

SOT−89 / PCP−1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States a.

Features


• Adoption of MBIT Process
• Low Collector to Emitter Saturation Voltage
• Large Current Capacity
• High Speed Switching Applications
• Voltage Regulators
• Relay Drivers
• Lamp Drivers
• Electrical Equipment SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Value Unit Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCES 100 V VCEO 50 V Emitter to Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Base Current IB 400 mA Collector Dissipation (Note 1) TC = 25°C PC W 1.3 3.5 Junction Tempera.

The same part from a different manufacturer

Datasheet 2SC5994 - Sanyo Semicon Device 2SC5994

Ordering number : ENN8035 2SC5994 2SC5994 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switch.

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