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• Adoption of MBIT Process
• Low Collector to Emitter Saturation Voltage
• Large Current Capacity
• High Speed Switching
Applications
• Voltage Regulators
• Relay Drivers
• Lamp Drivers
• Electrical Equipment
SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCES
100
V
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
4
A
Base Current
IB
400
mA
Collector Dissipation (Note 1) TC = 25°C
PC
W
1.3
3.5
Junction Tempera.
Ordering number : ENN8035 2SC5994 2SC5994 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5991 |
Sanyo Semicon Device |
NPN Transistor | |
2 | 2SC5993 |
INCHANGE |
NPN Transistor | |
3 | 2SC5993 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SC5998 |
Renesas |
NPN Transistor | |
5 | 2SC5999 |
Sanyo Semicon Device |
NPN Transistors | |
6 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor | |
8 | 2SC5902 |
INCHANGE |
NPN Transistor | |
9 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor | |
10 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor | |
11 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |