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2SC5900 No. 2SC5900 µ 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 5.45 0.8 2.1 2SC5900 µ µ PW=20µs D.C. 1% INPUT IB1 IB2 VR 50Ω + 100µF VBE= --5V + 470µF RB OUTPUT RL=66.7Ω VCC=200V ° ° ° ° ° ° ° ° ° ° ° ° 2SC5900 µ µ µ ° µ µ ° ° ° .
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2SC5900 - Inchange Semiconductor
·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5902 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 3 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 4 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC5907 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 7 | 2SC5909 |
Panasonic Semiconductor |
NPN Transistor |
|
| 8 | 2SC5912 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 9 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5914 |
Panasonic |
Silicon NPN Transistor |
|
| 11 | 2SC5915 |
Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 12 | 2SC5916 |
Rohm |
NPN TRANSISTOR |
|