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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) C.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC5902 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 5 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 6 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC5907 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 8 | 2SC5909 |
Panasonic Semiconductor |
NPN Transistor |
|
| 9 | 2SC5912 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 10 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5914 |
Panasonic |
Silicon NPN Transistor |
|
| 12 | 2SC5915 |
Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|