Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratin.
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage: VCBO ≥ 1 700 V
• Wide safe operation area
• Built-in dumper diode
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.7±0.1
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
e Collector-base voltage (Emitter open) VCBO
1 700
V
pe) Collector-emitter voltage (E-B short) VCES
1 700
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
3.3±0.3
(2.0)
5.5±0.3
V
sta tinu Base current
IB
3
A
a e cycle iscon Collecto.
2SC5902 - INCHANGE
·High Breakdown Voltage ·Built-in damper diode type ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 4 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC5907 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 7 | 2SC5909 |
Panasonic Semiconductor |
NPN Transistor |
|
| 8 | 2SC5912 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 9 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5914 |
Panasonic |
Silicon NPN Transistor |
|
| 11 | 2SC5915 |
Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 12 | 2SC5916 |
Rohm |
NPN TRANSISTOR |
|